Take over permanent storage implementation from MM-control-01

pull/20/head
D.R.racer 2021-05-26 14:34:07 +02:00 committed by DRracer
parent 9f2b5e5ecb
commit 8e994c3b17
3 changed files with 455 additions and 10 deletions

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#pragma once #pragma once
#include <stdint.h>
namespace hal { namespace hal {
namespace EEPROM { namespace EEPROM {
/// EEPROM interface /// EEPROM interface
void WriteByte(uint16_t addr, uint8_t value); void WriteByte(const uint8_t *addr, uint8_t value);
void UpdateByte(uint16_t addr, uint8_t value); void UpdateByte(const uint8_t *addr, uint8_t value);
uint8_t ReadByte(uint16_t addr); uint8_t ReadByte(const uint8_t *addr);
void WriteWord(const uint8_t *addr, uint16_t value);
void UpdateWord(const uint8_t *addr, uint16_t value);
uint16_t ReadWord(const uint8_t *addr);
/// @returns physical end address of EEPROM memory end
constexpr const uint16_t End();
} // namespace EEPROM } // namespace EEPROM
} // namespace hal } // namespace hal

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/// @author Marek Bel
#include "permanent_storage.h"
#include "../hal/eeprom.h"
namespace modules {
namespace permanent_storage {
#define ARR_SIZE(ARRAY) (sizeof(ARRAY) / sizeof(ARRAY[0]))
/// @brief EEPROM data layout
///
/// Do not remove, reorder or change size of existing fields.
/// Otherwise values stored with previous version of firmware would be broken.
/// It is possible to add fields in the end of this struct, ensuring that erased EEPROM is handled well.
/// Last byte in EEPROM is reserved for layoutVersion. If some field is repurposed, layoutVersion
/// needs to be changed to force an EEPROM erase.
struct eeprom_t {
uint8_t eepromLengthCorrection; ///< Legacy bowden length correction
uint16_t eepromBowdenLen[5]; ///< Bowden length for each filament
uint8_t eepromFilamentStatus[3]; ///< Majority vote status of eepromFilament wear leveling
uint8_t eepromFilament[800]; ///< Top nibble status, bottom nibble last filament loaded
uint8_t eepromDriveErrorCountH;
uint8_t eepromDriveErrorCountL[2];
} __attribute__((packed));
// @@TODO static_assert(sizeof(eeprom_t) - 2 <= hal::EEPROM::End(), "eeprom_t doesn't fit into EEPROM available.");
/// @brief EEPROM layout version
static const uint8_t layoutVersion = 0xff;
//d = 6.3 mm pulley diameter
//c = pi * d pulley circumference
//FSPR = 200 full steps per revolution (stepper motor constant) (1.8 deg/step)
//mres = 2 pulley microstep resolution (uint8_t __res(AX_PUL))
//mres = 2 selector microstep resolution (uint8_t __res(AX_SEL))
//mres = 16 idler microstep resolution (uint8_t __res(AX_IDL))
//1 pulley ustep = (d*pi)/(mres*FSPR) = 49.48 um
static eeprom_t *const eepromBase = reinterpret_cast<eeprom_t *>(0); ///< First EEPROM address
static const uint16_t eepromEmpty = 0xffff; ///< EEPROM content when erased
static const uint16_t eepromLengthCorrectionBase = 7900u; ///< legacy bowden length correction base (~391mm)
static const uint16_t eepromBowdenLenDefault = 8900u; ///< Default bowden length (~427 mm)
static const uint16_t eepromBowdenLenMinimum = 6900u; ///< Minimum bowden length (~341 mm)
static const uint16_t eepromBowdenLenMaximum = 16000u; ///< Maximum bowden length (~792 mm)
void Init() {
if (hal::EEPROM::ReadByte((const uint8_t *)hal::EEPROM::End()) != layoutVersion) {
EraseAll();
}
}
/// @brief Erase the whole EEPROM
void EraseAll() {
for (uint16_t i = 0; i < hal::EEPROM::End(); i++) {
hal::EEPROM::UpdateByte((uint8_t *)i, static_cast<uint8_t>(eepromEmpty));
}
hal::EEPROM::UpdateByte((const uint8_t *)hal::EEPROM::End(), layoutVersion);
}
/// @brief Is filament number valid?
/// @retval true valid
/// @retval false invalid
static bool validFilament(uint8_t filament) {
return filament < ARR_SIZE(eeprom_t::eepromBowdenLen);
}
/// @brief Is bowden length in valid range?
/// @param BowdenLength bowden length
/// @retval true valid
/// @retval false invalid
static bool validBowdenLen(const uint16_t BowdenLength) {
if ((BowdenLength >= eepromBowdenLenMinimum)
&& BowdenLength <= eepromBowdenLenMaximum) {
return true;
}
return false;
}
/// @brief Get bowden length for active filament
///
/// Returns stored value, doesn't return actual value when it is edited by increase() / decrease() unless it is stored.
/// @return stored bowden length
uint16_t BowdenLength::get() {
uint8_t filament = 0 /*active_extruder*/; //@@TODO
if (validFilament(filament)) {
uint16_t bowdenLength = hal::EEPROM::ReadByte((const uint8_t *)&(eepromBase->eepromBowdenLen[filament]));
if (eepromEmpty == bowdenLength) {
const uint8_t LengthCorrectionLegacy = hal::EEPROM::ReadByte(&(eepromBase->eepromLengthCorrection));
if (LengthCorrectionLegacy <= 200) {
bowdenLength = eepromLengthCorrectionBase + LengthCorrectionLegacy * 10;
}
}
if (validBowdenLen(bowdenLength))
return bowdenLength;
}
return eepromBowdenLenDefault;
}
/// @brief Construct BowdenLength object which allows bowden length manipulation
///
/// To be created on stack, new value is permanently stored when object goes out of scope.
/// Active filament and associated bowden length is stored in member variables.
BowdenLength::BowdenLength()
: filament(/*active_extruder*/ 0)
, length(BowdenLength::get()) // @@TODO
{
}
/// @brief Increase bowden length
///
/// New value is not stored immediately. See ~BowdenLength() for storing permanently.
/// @retval true passed
/// @retval false failed, it is not possible to increase, new bowden length would be out of range
bool BowdenLength::increase() {
if (validBowdenLen(length + stepSize)) {
length += stepSize;
return true;
}
return false;
}
/// @brief Decrease bowden length
///
/// New value is not stored immediately. See ~BowdenLength() for storing permanently.
/// @retval true passed
/// @retval false failed, it is not possible to decrease, new bowden length would be out of range
bool BowdenLength::decrease() {
if (validBowdenLen(length - stepSize)) {
length -= stepSize;
return true;
}
return false;
}
/// @brief Store bowden length permanently.
BowdenLength::~BowdenLength() {
if (validFilament(filament))
hal::EEPROM::UpdateWord((const uint8_t *)&(eepromBase->eepromBowdenLen[filament]), length);
}
/// @brief Get filament storage status
///
/// Uses 2 out of 3 majority vote.
///
/// @return status
/// @retval 0xff Uninitialized EEPROM or no 2 values agrees
uint8_t FilamentLoaded::getStatus() {
if (hal::EEPROM::ReadByte(&(eepromBase->eepromFilamentStatus[0])) == hal::EEPROM::ReadByte(&(eepromBase->eepromFilamentStatus[1])))
return hal::EEPROM::ReadByte(&(eepromBase->eepromFilamentStatus[0]));
if (hal::EEPROM::ReadByte(&(eepromBase->eepromFilamentStatus[0])) == hal::EEPROM::ReadByte(&(eepromBase->eepromFilamentStatus[2])))
return hal::EEPROM::ReadByte(&(eepromBase->eepromFilamentStatus[0]));
if (hal::EEPROM::ReadByte(&(eepromBase->eepromFilamentStatus[1])) == hal::EEPROM::ReadByte(&(eepromBase->eepromFilamentStatus[2])))
return hal::EEPROM::ReadByte(&(eepromBase->eepromFilamentStatus[1]));
return 0xff;
}
/// @brief Set filament storage status
///
/// @retval true Succeed
/// @retval false Failed
bool FilamentLoaded::setStatus(uint8_t status) {
for (uint8_t i = 0; i < ARR_SIZE(eeprom_t::eepromFilamentStatus); ++i) {
hal::EEPROM::UpdateByte(&(eepromBase->eepromFilamentStatus[i]), status);
}
if (getStatus() == status)
return true;
return false;
}
/// @brief Get index of last valid filament
///
/// Depending on status, it searches from the beginning or from the end of eepromFilament[]
/// for the first non-matching status. Previous index (of matching status, or out of array bounds)
/// is returned.
///
/// @return index to eepromFilament[] of last valid value
/// it can be out of array range, if first item status doesn't match expected status
/// getNext(index, status) turns it to first valid index.
int16_t FilamentLoaded::getIndex() {
const uint8_t status = getStatus();
int16_t index = -1;
switch (status) {
case KeyFront1:
case KeyFront2:
index = ARR_SIZE(eeprom_t::eepromFilament) - 1; // It is the last one, if no dirty index found
for (uint16_t i = 0; i < ARR_SIZE(eeprom_t::eepromFilament); ++i) {
if (status != (hal::EEPROM::ReadByte(&(eepromBase->eepromFilament[i])) >> 4)) {
index = i - 1;
break;
}
}
break;
case KeyReverse1:
case KeyReverse2:
index = 0; // It is the last one, if no dirty index found
for (int16_t i = (ARR_SIZE(eeprom_t::eepromFilament) - 1); i >= 0; --i) {
if (status != (hal::EEPROM::ReadByte(&(eepromBase->eepromFilament[i])) >> 4)) {
index = i + 1;
break;
}
}
break;
default:
break;
}
return index;
}
/// @brief Get last filament loaded
/// @param [in,out] filament filament number 0 to 4
/// @retval true success
/// @retval false failed
bool FilamentLoaded::get(uint8_t &filament) {
int16_t index = getIndex();
if ((index < 0) || (static_cast<uint16_t>(index) >= ARR_SIZE(eeprom_t::eepromFilament)))
return false;
const uint8_t rawFilament = hal::EEPROM::ReadByte(&(eepromBase->eepromFilament[index]));
filament = 0x0f & rawFilament;
if (filament > 4)
return false;
const uint8_t status = getStatus();
if (!(status == KeyFront1
|| status == KeyReverse1
|| status == KeyFront2
|| status == KeyReverse2))
return false;
if ((rawFilament >> 4) != status)
return false;
return true;
}
/// @brief Set filament being loaded
///
/// Always fails, if it is not possible to store status.
/// If it is not possible store filament, it tries all other
/// keys. Fails if storing with all other keys failed.
///
/// @param filament bottom 4 bits are stored
/// but only value 0 to 4 passes validation in FilamentLoaded::get()
/// @retval true success
/// @retval false failed
bool FilamentLoaded::set(uint8_t filament) {
for (uint8_t i = 0; i < BehindLastKey - 1; ++i) {
uint8_t status = getStatus();
int16_t index = getIndex();
getNext(status, index);
if (!setStatus(status))
return false;
uint8_t filamentRaw = ((status << 4) & 0xf0) + (filament & 0x0f);
hal::EEPROM::UpdateByte(&(eepromBase->eepromFilament[index]), filamentRaw);
if (filamentRaw == hal::EEPROM::ReadByte(&(eepromBase->eepromFilament[index])))
return true;
getNext(status);
if (!setStatus(status))
return false;
}
return false;
}
/// @brief Get next status and index
///
/// Get next available index following index input parameter to store filament in eepromFilament[].
/// If index would reach behind indexable space, status is updated to next and first index matching status indexing mode is returned.
/// @param [in,out] status
/// @param [in,out] index
void FilamentLoaded::getNext(uint8_t &status, int16_t &index) {
switch (status) {
case KeyFront1:
case KeyFront2:
++index;
if ((index < 0) || (static_cast<uint16_t>(index) >= ARR_SIZE(eeprom_t::eepromFilament))) {
getNext(status);
index = ARR_SIZE(eeprom_t::eepromFilament) - 1;
}
break;
case KeyReverse1:
case KeyReverse2:
--index;
if ((index < 0) || (static_cast<uint16_t>(index) >= ARR_SIZE(eeprom_t::eepromFilament))) {
getNext(status);
index = 0;
}
break;
default:
status = KeyFront1;
index = 0;
break;
}
}
/// @brief Get next status
///
/// Sets status to next indexing mode.
///
/// @param [in,out] status
void FilamentLoaded::getNext(uint8_t &status) {
switch (status) {
case KeyFront1:
status = KeyReverse1;
break;
case KeyReverse1:
status = KeyFront2;
break;
case KeyFront2:
status = KeyReverse2;
break;
case KeyReverse2:
status = KeyFront1;
break;
default:
status = KeyFront1;
break;
}
}
uint16_t DriveError::get() {
return ((static_cast<uint16_t>(getH()) << 8) + getL());
}
void DriveError::increment() {
uint16_t errors = get();
if (errors < 0xffff) {
++errors;
setL(errors);
setH(errors >> 8);
}
}
uint8_t DriveError::getL() {
uint8_t first = hal::EEPROM::ReadByte(&(eepromBase->eepromDriveErrorCountL[0]));
uint8_t second = hal::EEPROM::ReadByte(&(eepromBase->eepromDriveErrorCountL[1]));
if (0xff == first && 0 == second)
return 1;
return (first > second) ? ++first : ++second;
}
void DriveError::setL(uint8_t lowByte) {
hal::EEPROM::UpdateByte(&(eepromBase->eepromDriveErrorCountL[lowByte % 2]), lowByte - 1);
}
uint8_t DriveError::getH() {
return (hal::EEPROM::ReadByte(&(eepromBase->eepromDriveErrorCountH)) + 1);
}
void DriveError::setH(uint8_t highByte) {
hal::EEPROM::UpdateByte(&(eepromBase->eepromDriveErrorCountH), highByte - 1);
}
} // namespace permanent_storage
} // namespace modules

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/// Permanent storage implementation
/// This is the logic/wear levelling/data structure on top of the raw EEPROM API
/// @author Marek Bel
/// Extracted and refactored from MM-control-01
#pragma once #pragma once
#include "../hal/eeprom.h" #include "../hal/eeprom.h"
/// Permanent storage implementation
/// This is the logic/wear levelling/data structure on top of the raw EEPROM API
namespace modules { namespace modules {
namespace permanent_storage {
class PermanentStorage { void Init();
void EraseAll();
/// @@TODO extract from the current MMU implementation and wrap it into this structure /// @brief Read manipulate and store bowden length
}; ///
/// Value is stored independently for each filament.
/// Active filament is deduced from active_extruder global variable.
class BowdenLength {
public:
static uint16_t get();
static const uint8_t stepSize = 10u; ///< increase()/decrease() bowden length step size
BowdenLength();
bool increase();
bool decrease();
~BowdenLength();
private:
uint8_t filament; ///< Selected filament
uint16_t length; ///< Selected filament bowden length
};
/// @brief Read and store last filament loaded to nozzle
///
/// 800(data) + 3(status) EEPROM cells are used to store 4 bit value frequently
/// to spread wear between more cells to increase durability.
///
/// Expected worst case durability scenario:
/// @n Print has 240mm height, layer height is 0.1mm, print takes 10 hours,
/// filament is changed 5 times each layer, EEPROM endures 100 000 cycles
/// @n Cell written per print: 240/0.1*5/800 = 15
/// @n Cell written per hour : 15/10 = 1.5
/// @n Fist cell failure expected: 100 000 / 1.5 = 66 666 hours = 7.6 years
///
/// Algorithm can handle one cell failure in status and one cell in data.
/// Status use 2 of 3 majority vote.
/// If bad data cell is detected, status is switched to next key.
/// Key alternates between begin to end and end to begin write order.
/// Two keys are needed for each start point and direction.
/// If two data cells fails, area between them is unavailable to write.
/// If this is first and last cell, whole storage is disabled.
/// This vulnerability can be avoided by adding additional keys
/// and start point in the middle of the EEPROM.
///
/// It would be possible to implement twice as efficient algorithm, if
/// separate EEPROM erase and EEPROM write commands would be available and
/// if write command would allow to be invoked twice between erases to update
/// just one nibble. Such commands are not available in AVR Libc, and possibility
/// to use write command twice is not documented in atmega32U4 datasheet.
///
class FilamentLoaded {
public:
static bool get(uint8_t &filament);
static bool set(uint8_t filament);
private:
enum Key {
KeyFront1,
KeyReverse1,
KeyFront2,
KeyReverse2,
BehindLastKey,
};
static_assert(BehindLastKey - 1 <= 0xf, "Key doesn't fit into a nibble.");
static uint8_t getStatus();
static bool setStatus(uint8_t status);
static int16_t getIndex();
static void getNext(uint8_t &status, int16_t &index);
static void getNext(uint8_t &status);
};
/// @brief Read and increment drive errors
///
/// (Motor power rail voltage loss)
class DriveError {
public:
static uint16_t get();
static void increment();
private:
static uint8_t getL();
static void setL(uint8_t lowByte);
static uint8_t getH();
static void setH(uint8_t highByte);
};
} // namespace permanent_storage
} // namespace modules } // namespace modules